This paper is published in Volume-8, Issue-4, 2022
Area
VLSI
Author
Farhan Aziz, Vishal Lal Goswami, Ashutosh Dubey, Ranjeet Singh
Org/Univ
BSA College of Engineering and Technology, Mathura, Uttar Pradesh, India
Keywords
High Electron Mobility Transistor, HEMT, 2DEG, InAlAs/InGaAs Hetrostructure, Delta Doping, Spacer Layer
Citations
IEEE
Farhan Aziz, Vishal Lal Goswami, Ashutosh Dubey, Ranjeet Singh. Use of a spacer layer and doping, 0.5 µm AlInAs/InGaAs to improve mobility of HEMT, International Journal of Advance Research, Ideas and Innovations in Technology, www.IJARIIT.com.
APA
Farhan Aziz, Vishal Lal Goswami, Ashutosh Dubey, Ranjeet Singh (2022). Use of a spacer layer and doping, 0.5 µm AlInAs/InGaAs to improve mobility of HEMT. International Journal of Advance Research, Ideas and Innovations in Technology, 8(4) www.IJARIIT.com.
MLA
Farhan Aziz, Vishal Lal Goswami, Ashutosh Dubey, Ranjeet Singh. "Use of a spacer layer and doping, 0.5 µm AlInAs/InGaAs to improve mobility of HEMT." International Journal of Advance Research, Ideas and Innovations in Technology 8.4 (2022). www.IJARIIT.com.
Farhan Aziz, Vishal Lal Goswami, Ashutosh Dubey, Ranjeet Singh. Use of a spacer layer and doping, 0.5 µm AlInAs/InGaAs to improve mobility of HEMT, International Journal of Advance Research, Ideas and Innovations in Technology, www.IJARIIT.com.
APA
Farhan Aziz, Vishal Lal Goswami, Ashutosh Dubey, Ranjeet Singh (2022). Use of a spacer layer and doping, 0.5 µm AlInAs/InGaAs to improve mobility of HEMT. International Journal of Advance Research, Ideas and Innovations in Technology, 8(4) www.IJARIIT.com.
MLA
Farhan Aziz, Vishal Lal Goswami, Ashutosh Dubey, Ranjeet Singh. "Use of a spacer layer and doping, 0.5 µm AlInAs/InGaAs to improve mobility of HEMT." International Journal of Advance Research, Ideas and Innovations in Technology 8.4 (2022). www.IJARIIT.com.
Abstract
In this article, we optimize the performance of a high electron mobility In0.53Ga0.47As/In0.52Al0.48As transistor with a 0.5 m gate length and delta doping. Here, we have improved the mobility of the HEMT using variables like spacer layer fluctuation and delta doping. We simulate the -doped In0.53Ga0.47As/In0.52Al0.48As HEMT's conduction band discontinuities, threshold voltage, trans-conductance, cut-off frequency, and high-density two-dimensional electron gas. Analysis has been done on the parameters affecting the conduction band discontinuities, high-density 2DEG, and HEMT performance optimization.
